FINFET BASED 16 BIT ALU UNITS FOR LEAKAGE REDUCTION
نویسندگان
چکیده
منابع مشابه
Independent Gate Finfet Sram Cell Using Leakage Reduction Techniques
1 Research Scholar of Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India 2 Professor, Dept. of Electronics and Communication, Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India. __________________________________________________________________________________________ Abstract: Scaling of devices in bulk CMOS technology contributes to short channel effe...
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ژورنال
عنوان ژورنال: International Journal of Research in Engineering and Technology
سال: 2016
ISSN: 2321-7308,2319-1163
DOI: 10.15623/ijret.2016.0516061